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NoticeE9-32882009-02-17

Dynamic Random Access Memory Semiconductors from the Republic of Korea: Final Results of Countervailing Duty Administrative Review

Commerce Department, International Trade Administration

Abstract

On August 13, 2008, the Department of Commerce published in the Federal Register its preliminary results of administrative review of the countervailing duty order on dynamic random access memory semiconductors from the Republic of Korea for the period January 1, 2006, through December 31, 2006. Following the preliminary results, we provided interested parties with an opportunity to comment on the preliminary results. Our analysis of the comments submitted and information received after the preliminary results did not lead to any changes in the net subsidy rate. Therefore, the final results do not differ from the preliminary results. The final net subsidy rate for Hynix Semiconductor Inc. is listed below in the section entitled "Final Results of Review."

Action & Dates

Dates
February 17, 2009.

Document Excerpt

Document Headings Document headings vary by document type but may contain the following: the agency or agencies that issued and signed a document the number of the CFR title and the number of each part the document amends, proposes to amend, or is directly related to the agency docket number / agency internal file number the RIN which identifies each regulatory action listed in the Unified Agenda of Federal Regulatory and Deregulatory Actions See the Document Drafting Handbook for more details. Department of Commerce International Trade Administration [C-580-851] AGENCY: Import Administration, International Trade Administration, Department of Commerce. SUMMARY: On August 13, 2008, the Department of Commerce published in the Federal Register its preliminary results of administrative review of the countervailing duty order on dynamic random access memory semiconductors from the Republic of Korea for the period January 1, 2006, through December 31, 2006. Following the preliminary results, we provided interested parties with an opportunity to comment on the preliminary results. Our analysis of the comments submitted and information received after the preliminary results did not lead to any changes in the net subsidy rate. Therefore, the final results do not differ from the preliminary results. The final net subsidy rate for Hynix Semiconductor Inc. is listed below in the section entitled “Final Results of Review.” EFFECTIVE DATE: February 17, 2009. FOR FURTHER INFORMATION CONTACT: David Neubacher or Shane Subler, AD/CVD Operations, Office 1, Import Administration, U.S. Department of Commerce, 14th Street and Constitution Avenue, NW, Washington, DC 20230; telephone: (202) 482-5823 or (202) 482-0189, respectively. SUPPLEMENTARY INFORMATION: Background The following events have occurred since the publication of the preliminary results of this review. See Dynamic Random Access Memory Semiconductors from the Republic of Korea: Preliminary Results of Countervailin

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Related Documents

Other Federal Register documents from the same docket.

Full Document

Citation: 74 FR 7395