Classification Details
| Category | 3 — Electronics |
| Product Group | C — Materials |
| Description | High resistivity materials as follows (See List of Items Controlled). |
| Control Reasons | ATNS |
| License Exceptions | GBSLVS |
Items Controlled
a. Silicon Carbide (SiC), Gallium Nitride (GaN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), Gallium Oxide (Ga 2 O 3 ), or diamond semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10,000 ohm-cm at 20 °C; b. Polycrystalline "substrates" or polycrystalline ceramic "substrates", having resistivities greater than 10,000 ohm-cm at 20 °C and having at least one non-epitaxial single-crystal layer of Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN), Aluminum Nitride (AlN), Aluminum Gallium Nitride (AlGaN), Gallium Oxide (Ga 2 O 3 ), or diamond on the surface of the "substrate".
Related Controls
See ECCN 3E001 for related development and production technology, and ECCN 3B991.b.1.b for related production equipment.
Items may also be controlled under the ITAR (22 CFR 121) administered by the State Department Directorate of Defense Trade Controls (DDTC).
Related ECCNs
Export Control Context
Category 3 covers electronics including integrated circuits, semiconductor devices, and signal processing equipment. This is one of the largest categories on the CCL. 3A001 (electronic components) and related ECCNs are frequently encountered in semiconductor and advanced manufacturing supply chains.
Source: BIS Commerce Control List, eCFR Title 15 Part 774. This reference is for informational purposes only. For licensing determinations, consult BIS.doc.gov or a licensed export compliance attorney.
Cross-Source Intelligence
CSL Entities
1043
Related Export Codes (Schedule B)
Sources: BIS Commerce Control List (eCFR), Census Schedule B, BIS Consolidated Screening List