First seen Apr 20, 2023 · Last confirmed Sep 17, 2026 · Last updated Sep 15, 2026
Risk Level
High
7 lists confirmed
OFAC SDN
No Match
Direct SDN search
BIS CSL
Match
Consolidated Screening List
SAM.gov
Clear
No exclusions
Fed Register
1 mention
Designation notices & actions
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Data compiled from OpenSanctions, OFAC SDN, BIS Consolidated Screening List, Federal Register · As of 2026-09-18 · Updates daily
Microelectronic Research and Development Center Novosibirsk appears on 7 distinct sanctions and screening lists across multiple jurisdictions, indicating broad international consensus on restriction.
Nikolaeva Str., 8, Novosibirsk, Russian Federation, 630090; 630090, Россійська Федерація, Новосибірська область, м. Новосибірськ, вул. Ніколаєва, буд. 8; 8 Nikolayeva Street, Novosibirsk, Russia, 630090; 2/1 Akademika Lavrentyeva Avenue, Novosibirsk, Russia, 630090.; Akademika Lavrenteva Prospekt, 2/1, Novosibirsk, Russian Federation, 630090; 630090, Novosibirsk Oblast, Novosibirsk, Nikolaeva Str., 8, Russian Federation; 630090, Novosibirsk Oblast, Novosibirsk, Akademika Lavrenteva Prospekt, 2/1, Russian Federation; 8 Nikolayeva Street, Novosibirsk, 630090; 2/1 Akademika Lavrentyeva Avenue, Novosibirsk, 630090
| Also Known As |
|---|
| ノヴォシビルスク・マイクロエレクトロニクス研究開発センター |
| Конструкторсько-технологічний інститут прикладної мікроелектроніки Сибірського відділення Російської академії наук |
| Technological institute of applied microelectronics Siberion branch of Russian academy of sciences |
| Конструкторско-технологический институт прикладной микроэлектроники Сибирского отделения Российской академии наук |
| Konstruktorsko-tekhnolohichnyi instytut prykladnoyi mikroelektroniky Sybirskoho viddilennia Rosiiskoyi akademiyi nauk |
| KTIPM |
| Novosibirsk Branch of the Federal State Budgetary Institution of Science of the A.V. Rzhanov Institute of Semiconductor Physics SB RAS “Design and Technology Institute of Applied Microelectronics” |
| IFP KTIPM SO RAN |
| КТИПМ СО РАН |
| Новосибирский Филиал Федерального Государственного Бюджетного Учреждения Науки Института Физики Полупроводников имени А. В. Ржанова СО РАН «Конструкторско-Технологический Институт Прикладной Микроэлектроники» |
This entity also appears on the BIS Consolidated Screening List (CSL). Cross-screening confirms presence across multiple US government screening databases.
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Join the WaitlistThis screening data is provided for informational purposes only. Always verify against official government sources — OFAC, EU Official Journal, UN Security Council — before making compliance decisions.
