Base
Company6 sanctions listsRussia

Microelectronic Research and Development Center Novosibirs

First seen Apr 20, 2023 · Last confirmed Apr 24, 2026 · Last updated Jan 9, 2026

Entity Overview

Full Name
Microelectronic Research and Development Center Novosibirs
Entity Type
Company (Company)
Countries
Russia
OpenSanctions ID
NK-6mWPPVmJzBchaEjgzqcZeB
First Seen
Apr 20, 2023
Last Confirmed On List
Apr 24, 2026
Last Updated
Jan 9, 2026

Cross-Source Intelligence

Risk Level

High

7 lists confirmed

OFAC SDN

No Match

Direct SDN search

BIS CSL

Match

Consolidated Screening List

SAM.gov

Clear

No exclusions

Data compiled from OpenSanctions, OFAC SDN, BIS Consolidated Screening List · As of 2026-04-26 · Updates daily

Multi-List Designation

Microelectronic Research and Development Center Novosibirs appears on 7 distinct sanctions and screening lists across multiple jurisdictions, indicating broad international consensus on restriction.

Sanctions Lists (6)

Other Jurisdictions6 lists
  • ch_seco_sanctions
  • ua_nsdc_sanctions
  • jp_meti_ru
  • eu_sanctions_map
  • eu_journal_sanctions
  • us_trade_csl

Programs & Topics

export.controlsanction

Addresses

2/1 Akademika Lavrentyeva Avenue, Novosibirsk, Russia, 630090.; 8 Nikolayeva Street, Novosibirsk, 630090; 8 Nikolayeva Street, Novosibirsk, Russia, 630090; 2/1 Akademika Lavrentyeva Avenue, Novosibirsk, 630090; 630090, Россійська Федерація, Новосибірська область, м. Новосибірськ, вул. Ніколаєва, буд. 8

Aliases (11)

Also Known As
ノヴォシビルスク・マイクロエレクトロニクス研究開発センター
Конструкторско-технологический институт прикладной микроэлектроники Сибирского отделения Российской академии наук
Новосибирский Филиал Федерального Государственного Бюджетного Учреждения Науки Института Физики Полупроводников имени А. В. Ржанова СО РАН «Конструкторско-Технологический Институт Прикладной Микроэлектроники»
КТИПМ СО РАН
Microelectronic Research and Development Center Novosibirsk
Technological institute of applied microelectronics Siberion branch of Russian academy of sciences
Конструкторсько-технологічний інститут прикладної мікроелектроніки Сибірського відділення Російської академії наук
Novosibirsk Branch of the Federal State Budgetary Institution of Science of the A.V. Rzhanov Institute of Semiconductor Physics SB RAS “Design and Technology Institute of Applied Microelectronics”
IFP KTIPM SO RAN
Konstruktorsko-tekhnolohichnyi instytut prykladnoyi mikroelektroniky Sybirskoho viddilennia Rosiiskoyi akademiyi nauk
KTIPM

Also Found on Consolidated Screening List (1)

This entity also appears on the BIS Consolidated Screening List (CSL). Cross-screening confirms presence across multiple US government screening databases.

Related Entities (10)

Need automated sanctions monitoring?

Screen entities in bulk, get real-time alerts when sanctions lists update, and integrate compliance checks directly into your trade workflows.

Join the Waitlist

Compliance Disclaimer

This screening data is provided for informational purposes only. Always verify against official government sources — OFAC, EU Official Journal, UN Security Council — before making compliance decisions.