Foreign-Trade Zone (FTZ) 45, Notification of Proposed Production Activity; Qorvo US, Inc.; (Semiconductor Wafers and Modules); Hillsboro, Oregon

Document Headings Document headings vary by document type but may contain the following: the agency or agencies that issued and signed a document the number of the CFR title and the number of each part the document amends, proposes to amend, or is directly related to the agency docket number / agency internal file number the RIN which identifies each regulatory action listed in the Unified Agenda of Federal Regulatory and Deregulatory Actions See the Document Drafting Handbook for more details. Department of Commerce Foreign-Trade Zones Board [B-7-2026] Qorvo US, Inc. submitted a notification of proposed production activity to the FTZ Board (the Board) for its facility in Hillsboro, Oregon, within Subzone 45K. The notification conforming to the requirements of the Board's regulations ( 15 CFR 400.22 ) was received on January 15, 2026. Pursuant to 15 CFR 400.14(b) , FTZ production activity would be limited to ( printed page 2725) the specific foreign-status material(s)/component(s) and specific finished product(s) described in the submitted notification (summarized below) and subsequently authorized by the Board. The benefits that may stem from conducting production activity under FTZ procedures are explained in the background section of the Board's website—accessible via www.trade.gov/​ftz . The proposed finished products include: wafers (gallium arsenide; doped gallium arsenide; gallium arsenide amplifier; gallium nitride amplifier); modules (integrated circuit switch; amplifier); multi-layer printed circuit boards; connectors (terminal; printed circuit board); unmounted transistors; integrated circuit-based frequency and signal control units; attenuators; radio frequency integrated circuits; and, semiconductor testing devices (duty rate ranges from duty-free to 2.8%). The proposed foreign-status materials/components include: wafers (4 inch or 6 inch gallium nitride; 6 inch gallium arsenide; 6 inch doped gallium arsenide; 8 inch doped polycrystalline si…